參數(shù)資料
型號(hào)： FQS4900
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Dual N & P-Channel, Logic Level MOSFET
中文描述： 1.3 A, 60 V, 0.65 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SOP-8
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 1100K
代理商： FQS4900
2000 Fairchild Semiconductor International
F
Rev. A, August 2000
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
3. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
4. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= -250
μ
A
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 55°C
V
DS
= -300 V, V
GS
= 0 V
V
DS
= -240 V, T
C
= 55°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
N-Ch
P-Ch
60
-300
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1
10
-1
-10
100
-100
V
V
μ
A
μ
A
μ
A
μ
A
nA
nA
I
DSS
Zero Gate Voltage Drain Current
N-Ch
P-Ch
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
All
All
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= 4V, I
D
= 20 mA
V
DS
= 4V, I
D
= -20 mA
V
GS
= 10 V, I
D
= 0.65 A
V
GS
= 5 V, I
D
= 0.65 A
V
GS
= -10 V, I
D
= -0.15 A
V
GS
= -5 V, I
D
= -0.15 A
V
DS
= 10 V, I
D
= 0.65 A
V
DS
= -10 V, I
D
= -0.15 A
N-Ch
P-Ch
1.0
-1.0
--
--
--
--
--
1.95
-1.95
0.55
0.65
15.5
V
V
S
S
R
DS(on)
Static Drain-Source On-Resistance
N-Ch
0.39
0.46
11.2
P-CH
--
11.4
16
g
FS
Forward Transconductance
N-CH
P-CH
--
--
1.7
0.6
--
--
Switching Characteristics
t
d(on)
Turn-On Delay Time
N-Channel
V
DD
= 30 V, I
D
= 1.3 A,
R
G
= 25
P-Channel
V
DD
= -150 V, I
D
= -0.3 A,
R
G
= 25
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
--
--
--
--
--
--
--
--
--
--
--
--
--
--
5.7
10
21
25
11
35
17
47
1.6
3.6
0.28
0.42
0.82
2.1
21
30
50
60
32
80
45
105
2.1
4.7
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
nC
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
N-Channel
V
DS
= 48 V, I
D
= 1.3 A,
V
GS
= 5 V
P-Channel
V
DS
= -240 V, I
D
= -0.3 A,
V
GS
= -5 V
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
--
--
--
--
--
--
--
--
1.3
-0.3
1.5
-4.0
A
A
V
V
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= -0.3 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQS4900TF 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQS4900TF_Q 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQS4901 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:400V Dual N-Channel MOSFET
FQS4901 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FQS4901TF 功能描述:MOSFET 400V Dual N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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