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參數(shù)資料
| 型號： | FQS4900 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel, Logic Level MOSFET |
| 中文描述： | 1.3 A, 60 V, 0.65 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 1100K |
| 代理商： | FQS4900 |
2000 Fairchild Semiconductor International
F
Rev. A, August 2000
0
1
2
3
4
5
6
0
2
4
6
8
10
12
V
DS
= -150V
V
DS
= -60V
V
DS
= -240V
※
Note : I
D
= -0.3 A
-
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
50
100
150
200
250
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
-
D
-V
SD
, Source-Drain Voltage [V]
0.0
0.3
0.6
0.9
1.2
1.5
10
15
20
25
30
※
Note : T
J
= 25
℃
V
GS
= - 5V
V
GS
= - 10V
R
D
]
D
-I
D
, Drain Current [A]
0
2
4
6
8
10
10
-1
10
0
150
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= -25V
2. 250
μ
s Pulse Test
-
D
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
V
GS
Top : -10.0 V
-8.0 V
-6.0 V
-5.0 V
-4.5 V
-4.0 V
-3.5 V
Bottom : -3.0 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
-
D
,
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics : P-Channel
(Continued)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQS4900TF | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4900TF_Q | 功能描述:MOSFET N-Ch 60V/ P-Ch 300V Dual QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQS4901 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V Dual N-Channel MOSFET |
| FQS4901 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FQS4901TF | 功能描述:MOSFET 400V Dual N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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