參數(shù)資料
型號： FQT4N20L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V LOGIC N-Channel MOSFET
中文描述： 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/8頁
文件大小： 627K
代理商： FQT4N20L
Rev. A, May 2001
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 108mH, I
= 0.85A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
3.8A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
B
VDSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
200
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.16
--
V/°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 0.425 A
V
GS
= 5 V, I
D
= 0.425 A
V
DS
= 30 V, I
D
= 0.425 A
1.0
--
2.0
1.35
1.40
--
V
--
1.10
1.13
1.42
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
240
36
6
310
45
8
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 100 V, I
D
= 3.8 A,
R
G
= 25
--
--
--
--
--
--
--
7
70
15
40
4.0
1.0
1.9
25
150
40
90
5.2
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 160 V, I
D
= 3.8 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
90
0.25
0.85
3.4
1.5
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 0.85 A
V
GS
= 0 V, I
S
= 3.8 A,
dI
F
/ dt = 100 A/
μ
s
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