參數(shù)資料
型號(hào)： FQT7N10L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V LOGIC N-Channel MOSFET
中文描述： 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 642K
代理商： FQT7N10L
May 2001
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
F
QF E T
TM
FQT7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Features
1.7A, 100V, R
DS(on)
= 0.35
@V
GS
= 10 V
Low gate charge ( typical 4.6 nC)
Low Crss ( typical 12 pF)
Fast switching
Improved dv/dt capability
Low level gate drive requirments allowing
direct operationfrom logic drives
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQT7N10L
100
1.7
1.36
6.8
±
20
50
1.7
0.2
6.0
2.0
0.016
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
62.5
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
! "
!
!
S
!
"
"
D
G
SOT-223
FQT Series
G
D
S
相關(guān)PDF資料
PDF描述
FQT7N10 100V N-Channel MOSFET
FQT7P06 60V P-Channel MOSFET
FQU10N20L 200V LOGIC N-Channel MOSFET
FQU12N20 200V N-Channel MOSFET
FQU12N20L 200V LOGIC N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQT7N10LTF 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQT7N10LTF 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 100V 1.7A SOT-223
FQT7N10LTF-CUT TAPE 制造商:FAIRCHILD 功能描述:FQT7N10L Series 100 V 0.35 Ohm Surface Mount N-Channel Mosfet - SOT-223
FQT7N10TF 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQT7P06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET
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