參數(shù)資料
型號: FQT7P06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V P-Channel MOSFET
中文描述: 1.6 A, 60 V, 0.41 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 695K
代理商: FQT7P06
May 2001
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
F
QF E T
TM
FQT7P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
-1.6A, -60V, R
DS(on)
= 0.41
@V
GS
= -10 V
Low gate charge ( typical 6.3 nC)
Low Crss ( typical 25 pF)
Fast switching
Improved dv/dt capability
SOT-223
FQT Series
G
D
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQT7P06
-60
-1.6
-1.28
-6.4
±
25
90
-1.6
0.21
-7.0
2.1
0.017
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
60
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
!
!
D
!
!
!
S
G
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