參數(shù)資料
型號(hào): FQT7P06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V P-Channel MOSFET
中文描述: 1.6 A, 60 V, 0.41 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 695K
代理商: FQT7P06
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
F
0
1
2
Q
G
, Total Gate Charge [nC]
3
4
5
6
7
0
2
4
6
8
10
12
V
DS
= -30V
V
DS
= -48V
Note : I
D
= -7.0 A
-
G
,
10
-1
10
0
10
1
0
100
200
300
400
500
600
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.0
0.2
0.4
0.6
0.8
-V
SD
, Source-Drain Voltage [V]
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
10
-1
10
0
150
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
-
D
0
4
8
-I
D
, Drain Current [A]
12
16
20
24
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Note : T
J
= 25
V
GS
= - 20V
V
GS
= - 10V
R
D
]
D
2
4
6
8
10
-1
10
0
150
25
-55
Notes :
1. V
DS
= -30V
2. 250
μ
s Pulse Test
-
D
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
GS
V
- 10.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
-
D
,
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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