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參數(shù)資料
| 型號： | FQU2P25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V P-Channel MOSFET |
| 中文描述： | 2 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 535K |
| 代理商： | FQU2P25 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
N o tes :
1 . Z
2 . D uty F acto r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t) = 3.4
/W M ax.
J C
(t)
single p ulse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
J
(
t
1
, S q u a re W a ve P u ls e D u ra tio n [se c ]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
-
D
,
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
-
D
,
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
= -10 V
2. I
D
= -1.15 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= -250 A
-
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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參數(shù)描述 |
|---|---|
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| FQU30N06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET |
| FQU30N06_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET |
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