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參數(shù)資料
| 型號(hào)： | FQU9N08 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 80V N-Channel MOSFET(漏源電壓為80V、漏電流為7.4A的N溝道增強(qiáng)型MOS場效應(yīng)管) |
| 中文描述： | 7.4 A, 80 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 596K |
| 代理商： | FQU9N08 |
2000 Fairchild Semiconductor International
June 2000
Rev. A, June 2000
F
QFET
TM
FQD9N08 / FQU9N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
9.3A, 80V, R
DS(on)
= 0.21
@V
GS
= 10 V
Low gate charge ( typical 5.9 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD9N08 / FQU9N08
80
7.4
4.68
29.6
±
25
55
7.4
2.5
6.5
2.5
25
0.2
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
5.0
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQU9N15 | 150V N-Channel MOSFET(漏源電壓為150V、漏電流為7.0A的N溝道增強(qiáng)型MOS場效應(yīng)管) |
| FQD9N15 | 150V N-Channel MOSFET |
| FQU9N25 | 250V N-Channel MOSFET(漏源電壓為250V、漏電流為7.4A的N溝道增強(qiáng)型MOS場效應(yīng)管) |
| FQD9N25 | 250V N-Channel MOSFET |
| FR-159 | FAILURE REPORT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQU9N08L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET |
| FQU9N08LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU9N08TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU9N15 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FQU9N15TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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