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參數(shù)資料
| 型號(hào)： | FRX130H |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened N-Channel Power MOSFETs |
| 中文描述： | 輻射加固N(yùn)溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | FRX130H |
5
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
FRX130D, FRX130R, FRX130H
18 Pin CLCC
18 PIN CERAMIC LEADLESS CHIP CARRIER
ELEMENT
PAD
PINS CONNECTED
GATE
A
5
DRAIN
B
1, 2, 3, 4, 16, 17, 18
SOURCE
C
6, 7, 8, 9, 10, 11, 12, 13, 14, 15
E
D
R
1
R
A
D
2
D
1
E
2
E
1
e
b
L
1
2
L
1
SEATING
PLANE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.092
0.112
2.34
2.84
-
b
0.020
0.030
0.51
0.76
-
D
0.275
0.295
6.99
7.49
-
D
1
D
2
E
0.175
0.215
4.45
5.46
-
0.070
0.080
1.78
2.03
-
0.340
0.360
8.64
9.14
-
E
1
E
2
e
0.240
0.280
6.10
7.11
-
0.095
0.105
2.42
2.66
-
0.050 BSC
1.27 BSC
-
L
0.085
0.115
2.16
2.92
-
L
1
R
0.035
0.055
0.89
1.39
-
0.007
0.017
0.18
0.43
4
R
1
0.003
0.013
0.08
0.33
4
NOTES:
1. No current JEDEC outline for this package.
2. Allexposedmetallizedareasshallbeplatedwithaminimumof50
microinches of gold over nickel unless otherwise stated.
3. Metallized castellations shall be connected to the seating plane
and extend upward toward top of package.
4. Corner shape (notch, radius, square, etc.) may vary at the manu-
facturer's option.
5. Unlessotherwisespecified,aminimumclearanceof0.010inches
(0.25mm) shall be maintained between all metallized areas.
6. Controlling dimension: Inch.
7. Revision 1 dated 6-93.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRX130H4 | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R1 | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R3 | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R4 | Radiation Hardened N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRX130H1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | LLCC |
| FRX130H2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | LLCC |
| FRX130H3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | LLCC |
| FRX130H4 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
| FRX130R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
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