參數(shù)資料
型號： FS10KMJ-06
廠商： POWEREX INC
元件分類： JFETs
英文描述： Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述： 10 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220FN, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 42K
代理商： FS10KMJ-06
Feb.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
MITSUBISHI Nch POWER MOSFET
FS10KMJ-06
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
53
66
0.265
13
800
190
80
14
17
65
40
1.0
—
55
—
±
0.1
0.1
2.0
70
91
0.35
—
—
—
—
—
—
—
—
1.5
6.25
—
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 4V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 30V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, dis/dt = –100A/
μ
s
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
2
3
5
2
10
0
3 5 7
2
10
1
3 5 7
2
2
10
2
3 5 7
5
7
tw = 10
m
s
T
C
= 25
°
C
Single Pulse
100
m
s
10ms
1ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
3V
4V
6V
8V
V
GS
= 10V
Tc = 25
°
C
Pulse Test
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
P
D
= 20W
Tc = 25
°
C
Pulse Test
3V
4V
6V
V
GS
= 10V
8V
相關PDF資料
PDF描述
FS10KMJ-2 HIGH-SPEED SWITCHING USE
FS10KMJ-2 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ-3 HIGH-SPEED SWITCHING USE
FS10KMJ-3 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM HIGH-SPEED SWITCHING USE
相關代理商/技術參數(shù)
參數(shù)描述
FS10KMJ2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | SOT-186
FS10KMJ-2 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KMJ3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | SOT-186
FS10KMJ-3 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10R06VE3 功能描述:IGBT 模塊 N-CH 600V 16A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*