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參數(shù)資料
| 型號(hào)： | FS50KMJ-2 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開(kāi)關(guān)使用 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | FS50KMJ-2 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0
2
4
6
8
10
T
C
= 25
°
C
V
DS
= 10V
Pulse Test
0
1
2
3
4
5
0
2
4
6
8
10
I
D
= 80A
T
C
= 25
°
C
Pulse Test
50A
20A
10
2
3
2
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
2
10
1
3 5 7
3 5 7
2
10
2
3 5 7
2 3
Ciss
Coss
Crss
Tch = 25
°
C
V
GS
= 0V
f = 1MH
Z
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
d(on)
t
r
T
ch
= 25
°
C
V
DD
= 50V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25
°
C
75
°
C
125
°
C
V
DS
= 10V
Pulse Test
0
20
40
60
80
100
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2 3
V
GS
= 4V
10V
T
C
= 25
°
C
Pulse Test
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| FS50R12KT3 | echnische Information / technical information |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FS50KMJ-2(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS50KMJ-2-A8 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50KMJ3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 50A I(D) | SOT-186 |
| FS50KMJ-3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50KMJ-3(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
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