參數(shù)資料
型號(hào)： FS50R12KT3
廠商： INFINEON TECHNOLOGIES AG
元件分類(lèi)： IGBT 晶體管
英文描述： echnische Information / technical information
中文描述： 75 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-28
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 276K
代理商： FS50R12KT3
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS50R12KT3
prepared by: Martin Knecht
approved by: Robert Severin
date of publication: 2003-6-27
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
50
75
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
100
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
280
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 50 A, V = 15 V, TY = 25°C
I = 50 A, V = 15 V, TY = 125°C
V ùèú
1,70
1,90
2,15
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 2,00 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
0,47
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
4,0
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
3,50
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,13
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 50 A, V = 600 V
V = ±15 V, Róò = 18 , TY = 25°C
V = ±15 V, Róò = 18 , TY = 125°C
tá óò
0,09
0,09
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 50 A, V = 600 V
V = ±15 V, Róò = 18 , TY = 25°C
V = ±15 V, Róò = 18 , TY = 125°C
t
0,03
0,05
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 50 A, V = 600 V
V = ±15 V, Ró = 18 , TY = 25°C
V = ±15 V, Ró = 18 , TY = 125°C
tá ó
0,42
0,52
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 50 A, V = 600 V
V = ±15 V, Ró = 18 , TY = 25°C
V = ±15 V, Ró = 18 , TY = 125°C
t
0,07
0,09
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 50 A, V = 600 V, L = 70 nH
V = ±15 V, Róò = 18 , TY = 25°C
V = ±15 V, Róò = 18 , TY = 125°C
Eóò
5,00
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 50 A, V = 600 V, L = 70 nH
V = ±15 V, Ró = 18 , TY = 25°C
V = ±15 V, Ró = 18 , TY = 125°C
Eó
5,50
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
200
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,45
K/W
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FS50R12KT3_04 制造商:EUPEC 制造商全稱(chēng):EUPEC 功能描述:EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS50R12KT4_B11 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12KT4_B15 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12W2T4 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS50R12W2T4_B11 功能描述:IGBT 模塊 IGBT 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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