參數(shù)資料
型號： FS75R17KE3
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： IGBT-Module
中文描述： 130 A, 1700 V, N-CHANNEL IGBT
封裝： MODULE-35
文件頁數(shù)： 2/8頁
文件大?。?/td> 316K
代理商： FS75R17KE3
2
Technische Information / technical information
FS75R17KE3
IGBT-Module
IGBT-modules
prepared by: Martin Wlz
approved by: Wilhelm Rusche
date of publication: 2003-8-20
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1700
V
Dauergleichstrom
DC forward current
I
75
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
150
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
1050
A2s
Charakteristische Werte / characteristic values
min.
typ.
1,80
1,90
max.
2,20
Durchlassspannung
forward voltage
I = 75 A, V = 0 V, TY = 25°C
I = 75 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 75 A, - di/dt = 1800 A/μs
V = 900 V, V = -15 V, TY = 25°C
V = 900 V, V = -15 V, TY = 125°C
I￠
115
125
A
A
Sperrverzgerungsladung
recovered charge
I = 75 A, -di/dt = 1800 A/μs
V = 900 V, V = -15 V, TY = 25°C
V = 900 V, V = -15 V, TY = 125°C
Q
22,0
36,5
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 75 A, -di/dt = 1800 A/μs
V = 900 V, V = -15 V, TY = 25°C
V = 900 V, V = -15 V, TY = 125°C
Etê
11,5
20,5
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,48
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
min.
typ.
max.
Nennwiderstand
rated resistance
T = 25°C
Rè
5,00
k
Abweichung von R
deviation of R
T = 100°C, R = 493
R/R
-5
5
%
Verlustleistung
power dissipation
T = 25°C
Pè
20,0
mW
B-Wert
B-value
Rè = Rè exp [Bè(1/Tè - 1/(298, 15K))]
Bè
3375
K
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