參數(shù)資料
型號: FSAM10SH60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 運動控制電子
英文描述: 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: AC MOTOR CONTROLLER, 20 A, DMA32
文件頁數(shù): 2/17頁
文件大小: 349K
代理商: FSAM10SH60
2001 Fairchild Semiconductor Corporation
F
-
October 2001
Integrated Power Functions
600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 7, 12 and 13.
For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 13.
Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)
Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Fig. 2.
Top View
C
SC
V
CC(UH)
V
S(U)
V
CC(VH)
V
S(V)
V
CC(WH)
V
S(W)
R
TH
N
U
N
V
N
W
U
V
W
P
V
COM
(L)
IN
(UL)
IN
(VL)
IN
COM
(L)
V
FO
C
FOD
R
SC
IN
(UH)
V
B(U)
IN
COM
(H)
V
B(V)
IN
(WH)
V
B(W)
V
TH
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相關代理商/技術參數(shù)
參數(shù)描述
FSAM10SH60A 功能描述:IGBT 晶體管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FSAM10SM60A 功能描述:IGBT 晶體管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FSAM15SH60 功能描述:IGBT 晶體管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FSAM15SH60A 功能描述:IGBT 晶體管 600V/15A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FSAM15SL60 功能描述:IGBT 晶體管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube