參數(shù)資料
型號: FSB660
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: PNP Low Saturation Transistor(集電極電流達(dá)2A的PNP低飽和電壓晶體管)
中文描述: 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-3
文件頁數(shù): 1/7頁
文件大小: 223K
代理商: FSB660
FSB660 / FSB660A
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
2
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
60
Collector-Base Voltage
V
CBO
V
60
Collector-Emitter Voltage
V
CEO
Units
FSB660/FSB660A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
500
Total Device Dissipation
P
D
FSB660/FSB660A
Units
Max
Characteristic
Symbol
SuperSOT
TM
-3 (SOT-23)
F
2000 Fairchild Semiconductor International FSB660/FSB660A Rev. B
C
E
B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSB660_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Low Saturation Transistor
FSB660_Q 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB660A 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB660A_Q 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB66B0205K-- 制造商:AVX Corporation 功能描述:TPC MEDIUM POWER CAP,2 UF,10%,850V,BULK,SN/PB - Bulk