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參數(shù)資料
| 型號(hào)： | FSB660A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | PNP Low Saturation Transistor(集電極電流達(dá)2A的PNP低飽和電壓晶體管) |
| 中文描述： | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 223K |
| 代理商： | FSB660A |
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SSOT-3
(8mm)
3.15
+/-0.10
2.77
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.30
+/-0.10
0.228
+/-0.013
5.2
+/-0.3
0.06
+/-02
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Component Rotation
User Direction of Feed
SSOT-3 Embossed Carrier Tape
Configuration:
Figure 3.0
SSOT-3 Reel Configuration:
Figure 4.0
P1
A0
D1
F
W
E1
E2
Tc
Wc
K0
T
B0
D0
P0
P2
SuperSOT
TM
-3 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. C
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PDF描述 |
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| FSB660 | PNP Low Saturation Transistor(集電極電流達(dá)2A的PNP低飽和電壓晶體管) |
| FSB6726 | PNP General Purpose Amplifier |
| FSB749 | PNP Low Saturation Transistor |
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| FSBB20CH60 | Smart Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSB660A_Q | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FSB66B0205K-- | 制造商:AVX Corporation 功能描述:TPC MEDIUM POWER CAP,2 UF,10%,850V,BULK,SN/PB - Bulk |
| FSB66B0225K-- | 制造商:AVX Corporation 功能描述:AVX DESIGN WIN PART LOAD - Bulk |
| FSB66B0255K-- | 制造商:AVX Corporation 功能描述:TPC MEDIUM POWER CAP,2.50UF,10%,850V,BULK,SN/PB - Bulk |
| FSB66N0564K-- | 制造商:AVX Corporation 功能描述:AVX DESIGN WIN PART LOAD - Bulk |
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