參數(shù)資料
型號: FSBCW30
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: PNP General Purpose Amplifier(PNP通用運算放大器)
中文描述: 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-3
文件頁數(shù): 1/5頁
文件大?。?/td> 43K
代理商: FSBCW30
F
FSBCW30, Rev B
Discrete POWE R & Signal
T echnologies
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
32
32
5.0
500
V
V
V
mA
°
C
-55 to +150
1998 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FSBCW30
500
4
250
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
*
Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in
2
of 2oz copper.
FSBCW30
SuperSOT
TM
-3
C
B
E
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