參數(shù)資料
型號(hào): FSBCW30
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP General Purpose Amplifier(PNP通用運(yùn)算放大器)
中文描述: 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-3
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 43K
代理商: FSBCW30
F
FSBCW30, Rev B
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
BV
CEO
Collector-Emitter Breakdown
Voltage
BV
CBO
Collector-Base Breakdown Voltage
BV
CES
Collector-Emitter Breakdown
Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 2.0 mA, I
B
= 0
32
V
I
C
= 10
μ
A, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
32
32
V
V
I
E
= 10
μ
A, I
C
= 0
V
CB
= 32 V, I
E
= 0
V
CB
= 32 V, I
E
= 0, T
A
= +100
°
C
5.0
V
nA
μ
A
100
10
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 2.0 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 5.0 V, I
C
= 2.0 mA
215
500
0.30
0.75
V
V
0.60
SMALL SIGNAL CHARACTERISTICS
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 200
μ
A,
R
S
= 2.0 k
, f = 1.0 kHz,
B
W
= 200 Hz
10
dB
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