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參數(shù)資料
| 型號： | FSBM10SH60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | AC MOTOR CONTROLLER, 20 A, DMA32 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 2337K |
| 代理商： | FSBM10SH60 |
2003 Fairchild Semiconductor Corporation
F
Rev. D, August 2003
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
COM
(L)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
COM
(H)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
NC
NC
N
U
N
V
N
W
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Low-side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Supply Ground
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
No Connection
No Connection
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSBM10SM60A | SPMTM (Smart Power Module) |
| FSBM15SH60A | SPM (Smart Power Module) |
| FSBM15SH60 | SPMTM (Smart Power Module) |
| FSBM15SL60 | SPMTM (Smart Power Module) |
| FSBM15SM60A | SPM (Smart Power Module) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSBM10SH60A | 功能描述:IGBT 晶體管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSBM10SM60A | 功能描述:IGBT 晶體管 600V/10A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSBM15SH60 | 功能描述:IGBT 晶體管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSBM15SH60A | 功能描述:IGBT 晶體管 600V/15A/ SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSBM15SL60 | 功能描述:IGBT 晶體管 600V 15A SPM2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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