參數(shù)資料
型號： FSF9250R4
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 15 A, 200 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝： HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 45K
代理商： FSF9250R4
3-217
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 15A
I
SD
= 15A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
300
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -160V
V
GS
= -12V, I
D
= 15A
V
GS
= -12V, I
D
= 9A
-200
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-4.57
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.290
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
20
-200
Br
37
36
5
-200
Br
37
36
10
-160
Br
37
36
15
-100
Br
37
36
20
-40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-120
-80
-40
0
0
10
15
20
25
5
V
GS
(V)
V
D
-160
-200
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
FSF9250D, FSF9250R
相關(guān)PDF資料
PDF描述
FSGJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
FSGJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
FSGL230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
FSGL234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
FSGS230D1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSFA2100 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 450W Half-bridge Asymmetric Power RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關(guān)頻率:1 MHz 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel
FSFD 10-0.5 制造商:TURCK Inc 功能描述:Sensor Connector 制造商:TURCK Inc 功能描述:SENSOR CONNECTOR; Cable Length:0.5m; Connector Mounting:Panel; Connector Type:Sensor; Contact Material:Brass; Contact Plating:Gold; Contact Termination:Solder; Gender:Plug; No. of Contacts:10; No. of Positions:10; Series:Eurofast ;RoHS Compliant: Yes
FSFD 10-1.0 制造商:TURCK Inc 功能描述:Receptacle, Rear Mount with Leads, 10X24 AWG
FSFD 12-0.5 制造商:TURCK Inc 功能描述:U0910-93 制造商:TURCK Inc 功能描述:Sensor Connector 制造商:TURCK Inc 功能描述:SENSOR CONNECTOR; Cable Length:0.5m; Connector Mounting:Panel; Connector Type:Sensor; Contact Material:Brass; Contact Plating:Gold; Contact Termination:Solder; Gender:Receptacle; No. of Contacts:12; No. of Positions:12 ;RoHS Compliant: Yes
FSFD 4.4 制造商:TURCK Inc 功能描述:FSFD 4.4
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*