參數(shù)資料
型號: FSF9250R4
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述: 15 A, 200 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝: HERMETIC SEALED, METAL, TO-254AA, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 45K
代理商: FSF9250R4
3-218
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
16
12
8
4
18
100
10
1
-1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
10ms
1ms
100
μ
s
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 9A
N
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
P
DM
t
1
t
2
FSF9250D, FSF9250R
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