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參數(shù)資料
| 型號： | FSGL230R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管) |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FSGL230R |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSGL230R
200
200
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
8
5
A
A
A
V
29
±
30
25
10
0.20
29
8
29
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
1.0 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
200
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
30V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 8A
I
D
= 5A,
V
GS
= 12V
-
-
1.48
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.145
0.180
-
-
0.324
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 100V, I
D
= 8A,
R
L
= 12.5
, V
GS
= 12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
40
ns
Turn-Off Delay Time
-
-
35
ns
Fall Time
-
-
15
ns
Total Gate Charge
V
GS
= 0V to 12V
V
DD
= 100V,
I
D
= 8A
-
26
28
nC
Gate Charge Source
-
10
12
nC
Gate Charge Drain
-
8
10
nC
Gate Charge at 20V
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 8A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
40
-
nC
Threshold Gate Charge
-
3
-
nC
Plateau Voltage
-
7
-
V
Input Capacitance
-
1300
-
pF
Output Capacitance
-
230
-
pF
Reverse Transfer Capacitance
-
8
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
FSGL230R
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| FSGM0465R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Green-Mode Fairchild Power Switch |
| FSGM0465RB | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Green-Mode Fairchild Power Switch |
| FSGM0465RBLDTU | 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FSGM0465RBUDTU | 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FSGM0465RBWDTU | 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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