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參數(shù)資料
| 型號： | FSR1110R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 164K |
| 代理商： | FSR1110R |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 1.0A
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 1.0A, dI
SD
/dt = 100A/
μ
s
-
-
110
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS
= 0, I
D
= 1mA
100
-
V
Gate to Source Threshold Volts
(Note 3)
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
100
nA
Zero Gate Leakage
(Note 3)
I
DSS
V
GS
= 0, V
DS
= 80V
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
V
DS(ON)
V
GS
= 12V, I
D
= 1.0A
-
0.710
V
Drain to Source On Resistance
(Notes 1, 3)
r
DS(ON)12
V
GS
= 12V, I
D
= 0.6A
-
0.680
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
28
43
-20
100
Br
37
36
-10
100
Br
37
36
-15
80
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
FSR1110D, FSR1110R
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