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參數(shù)資料
| 型號(hào)： | FSR1110R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | FSR1110R |
4
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
120
100
80
60
40
20
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
TEMP = 25
o
C
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
1.2
1.0
0.8
0.6
0.4
0.2
10
1
1
I
D
,
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
100
0.1
1000
0.1
5ms
10ms
50ms
T
C
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
V
G
Q
GS
12V
Q
G
Q
GD
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 0.6A
FSR1110D, FSR1110R
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