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參數(shù)資料
| 型號： | FSS130D |
| 廠商： | Intersil Corporation |
| 英文描述： | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 第11A，100V的，0.210歐姆，拉德硬，SEGR耐，N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | FSS130D |
3-72
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSS130D, FSS130R
100
100
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
11
7
33
±
20
A
A
A
V
50
20
0.40
33
11
33
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
100
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 11A
I
D
= 7A,
V
GS
= 12V
-
2.43
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.140
0.210
-
-
0.351
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 50V, I
D
= 11A,
R
L
= 4.55
, V
GS
= 12V,
R
GS
= 7.5
-
-
65
ns
Rise Time
-
-
200
ns
Turn-Off Delay Time
-
-
130
ns
Fall Time
-
-
90
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 11A
-
-
63
nC
Gate Charge at 12V
-
32
42
nC
Threshold Gate Charge
-
-
2.4
nC
Gate Charge Source
-
8.0
11
nC
Gate Charge Drain
-
17
23
nC
Plateau Voltage
I
D
=11A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
9
-
V
Input Capacitance
-
800
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
90
-
pF
Thermal Resistance Junction to Case
-
-
2.5
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
60
FSS130D, FSS130R
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PDF描述 |
|---|---|
| FSS130D1 | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130D3 | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R1 | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FSS130D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130D4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-257AA |
| FSS130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS130R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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