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參數(shù)資料
| 型號(hào)： | FSTI20040 |
| 英文描述： | SCHOTTKY DIODES MODULE TYPE 200A |
| 中文描述： | 肖特基二極管模塊類(lèi)型200安培 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 112K |
| 代理商： | FSTI20040 |
AvErage ForwArd Rectified Current - AmPeres
Case
Temperature -
Figure .2-Forward Derating Curve
0
180
30
60
90
120
0
40
150
I
F
-
Instantaneous Forward Voltage - Volts
Figure .1-Typical Forward Characteristics
A
Volts
1
100
4
250
500
8
Figure
Peak Forward Surge Current
Peak
Forward Surge Current -
Amperes
Number Of Cycles At 60Hz - Cycles
Cycles
2
6
10
20
60 80
40
A
Ap
750
1000
1250
0
0 0.2 0.4 0.6 0.8 1.0 1.2
60
20
FSTI20020 THRU FSTI20045
80
100
120
P
P
P
1500
2.0
4.0
6.0
10
20
40
100
60
200
400
600
1000
1.0
Figure .4-Typical Reverse Characteristics
Reverse Voltage - Volts
Volts
Tj =125 C
T
J
=25
T
J
=75
Tj =150 C
40
60
200
100
.1
.2
.4
.6
1
2
4
6
10
20
400
600
.04
.06
1000
.02
T
J
=25
Single Phase, Half Wave
60Hz Resistive or Inductive Load
.3-
10
20
30
40
0
50
Amps
m
Intaneous
Reverse
Leakage
Current
A
8.3ms Single Half
Sine Wave
JEDEC method
T
J
=25
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSTI20045 | 制造商:TRSYS 制造商全稱(chēng):Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 200A |
| FSTJ9055D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTJ9055D1 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTJ9055D3 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSTJ9055R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
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