參數(shù)資料
型號(hào)： FSX027X
廠(chǎng)商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： GaAs FET & HEMT Chips
中文描述： 砷化鎵場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 53K
代理商： FSX027X
1
Edition 1.2
July 1999
FEATURES
Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=10dB(Typ.)@8.0GHz
Proven Reliability
DESCRIPTION
The FSX027X is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear
drive amplifiers or oscillators.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
W
°
C
°
C
VGS
PT
TSTG
TCH
VDS
Rating
Condition
Unit
12
-5
1.5
Tc = 25
°
C
-65 to 175
175
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
70
110
150
-
100
-
-0.7
-
-1.2
-1.7
2.5
-
-5.0
-
-
-
9.5
-
VDS = 3V, IDS = 5.4mA
VDS = 3V, IDS = 30mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7IDSS
VDS = 8V,
IDS = 0.7IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 54mA
VDS = 3V, VGS = 0V
IGS = -5.4
μ
A
mA
mS
V
dB
-
24.5
24.5
23.5
14.0
10.0
6.5
-
-
-
-
-
-
dBm
dBm
dBm
dB
dB
dB
23.5
-
-
9.0
-
-
70
100
°
C/W
dB
V
gm
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DRAIN
SOURCE
SOURCE
GATE
Fujitsu
’
s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FSX027X
GaAs FET & HEMT Chips
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