- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375947 > FSYC360R (Intersil Corporation) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSYC360R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | FSYC360R |
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent)
T
C
= 25
o
C, Unless Otherwise Specified
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
I
DSS
r
DS(ON)
V
GS(TH)
V
GS
=
±
20V
V
DS
= 80% Rated Value
T
C
= 25
o
C at Rated I
D
I
D
= 1.0mA
±
20 (Note 7)
nA
Zero Gate Voltage Drain Current
±
25 (Note 7)
μ
A
Drain to Source On Resistance
±
20% (Note 8)
Gate Threshold Voltage
±
20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Unclamped Inductive Switching
V
GS(PEAK)
= 15V, L = 0.1mH, Limit = 63A
t
H
= 10ms; V
H
= 25V; I
H
= 4A; Limit = 55mV
V
GS
= 30V, t = 250
μ
s
Optional
V
GS(PEAK)
= 15V, L = 0.1mH, Limit = 63A
t
H
= 10ms; V
H
= 25V; I
H
= 4A; Limit = 55mV
V
GS
= 30V, t = 250
μ
s
Required
Thermal Response
Gate Stress
Pind
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
Interim Electrical Tests (Note 9)
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 160 hours
10%
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 240 hours
5%
PDA
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
FSYC360D, FSYC360R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSYC360R3 | CONN MOD 5 POS FEMALE SMD |
| FSYC360R4 | CONN MOD 5 POS FEMALE SMD |
| FSYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC360R3 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC360R4 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC9055D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D1 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
| FSYC9055D3 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。