型號: | FSYC9055D3 |
廠商: | INTERSIL CORP |
元件分類: | JFETs |
英文描述: | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
中文描述: | 59 A, 60 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET |
封裝: | CERAMIC, LCC-3 |
文件頁數(shù): | 4/8頁 |
文件大小: | 51K |
代理商: | FSYC9055D3 |
相關PDF資料 |
PDF描述 |
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FSYC9055R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R1 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R3 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
FSYC9055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |
FSYC9160D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs |