參數(shù)資料
型號(hào): FT1500DL-8
廠商: Powerex Power Semiconductors
英文描述: Phase Control SCR 1500 Amperes Avg 200-1200 Volts
中文描述: 相位控制晶閘管一千五百安培平均200-1200伏特
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 41K
代理商: FT1500DL-8
Feb.1999
I
RRM
I
DRM
V
TM
d
v
/d
t
V
GT
V
GD
I
GT
R
th(j-f)
MITSUBISHI GENERAL USE THYRISTORS
FT1500AU-240
HIGH VOLTAGE, HIGH POWER, GENERAL USE
DYNAMIC GATE, PRESS PACK TYPE
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
mA
mA
V
V/
μ
s
V
V
mA
°
C/W
2000
0.2
1200
1200
4.0
2.5
350
0.005
ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
T
j
= 125
°
C, V
RRM
Applied
T
j
= 125
°
C, V
DRM
Applied
T
j
= 125
°
C, I
TM
= 3000A, Instantaneous measument
T
j
= 125
°
C, V
D
= 1/2V
DRM
T
j
= 25
°
C, V
D
= 6V, R
L
= 2
T
j
= 125
°
C, V
D
= 1/2V
DRM
T
j
= 25
°
C, V
D
= 6V, R
L
= 2
Junction to fin
10
2
10
3
2
3
5
7
10
4
2
3
5
7
10
5
2
3
5
7
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
T
j
= 125°C
0
10
–3
2
0.001
0.002
0.003
0.005
0.006
10
–2
3 5 7
2
10
–1
3 5 7
2
10
0
3 5 7
10
0
2
10
1
3 5 7
0.004
0
10
0
10
20
30
40
50
10
1
2
3
5 7
10
2
2
3
5 7
10
0
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
FGM
= 20V
P
FGM
= 30W
V
GT
= 2.5V
V
GD
= 0.2V
P
FG(AV)
= 8W
I
FGM
= 6.0A
I
GT
25°C
–40°C
T
j
= 125°C
O
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
S
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
G
GATE CURRENT (mA)
GATE CHARACTERISTICS
T
TIME (s)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
Symbol
Parameter
Test conditions
Limits
Typ
Min
Unit
Max
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