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參數(shù)資料
| 型號： | FT1500DL-8 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Phase Control SCR 1500 Amperes Avg 200-1200 Volts |
| 中文描述： | 相位控制晶閘管一千五百安培平均200-1200伏特 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | FT1500DL-8 |
Feb.1999
MITSUBISHI GENERAL USE THYRISTORS
FT1500AU-240
HIGH VOLTAGE, HIGH POWER, GENERAL USE
DYNAMIC GATE, PRESS PACK TYPE
5
10
15
20
0
2
4
6
8
10
1
3
5
7
9
d
iG
/d
t
= 1.5A/
μ
s
V
D
= 6000V
I
TM
= 3000A
d
iT
/d
t
= 100A/
μ
s
T
j
= 125°C
0.1V
D
t
0
V
A
,
G
V
0.1I
GM
I
GM
t
gt
0
1000
2000
3000
0
100
50
150
t
V
A
,
A
V
R
t
q
d
i
/d
t
d
v
/d
t
0
+
–
V
D
I
TM
I
TM
= 2800A
d
i
/d
t
= –10A/
μ
s
V
R
= 100V
V
D
= 6000V
d
v
/d
t
= 3V/
μ
s
0
–60
500
1000
1500
2000
2500
3000
–20
20
60
100
140
I
H
I
L
t
0
i
G
,
A
I
L
t
gw
I
G
VARIABLE RESISTANCE
METHOD
I
L
condition :
I
H
condition :
V
D
= 6V
I
G
= 1050mA
tgw = 200
μ
s
V
D
= 12V
0
10
0
1000
2000
3000
10
1
2
3 4 5 7
10
2
2
3 4 5 7
t
V
A
,
A
V
R
t
q
d
i
/d
t
d
v
/d
t
0
+
–
V
D
I
TM
I
TM
= 2800A
d
i
/d
t
= –10A/
μ
s
V
R
= 100V
V
D
= 6000V
T
j
= 80°C
0
2000
4000
6000
8000
10000
R
μ
C
0
150
50
100
t
trr
trr
Irm
2
Q
RR
=
Irm
I
TM
V
A
,
A
V
RM
d
i
/d
t
0
–
+
I
TM
= 3000A
d
i
/d
t
= –10A/
μ
s
V
RM
= 150V
H
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT LATCHING CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
T
μ
s
GATE CURRENT (A)
TURN-ON TIME VS. GATE
CURRENT (TYPICAL)
JUNCTION TEMPERATURE (°C)
TURN-OFF TIME VS. JUNCTION
TEMPERATURE (TYPICAL)
T
μ
s
RATE OF DECREASE OF ON-STATE CURRENT (A/
μ
s)
R
μ
C
REVERSE RECOVERED
CHARGE VS. RATE OF DECREASE
OF ON-STATE CURRENT (TYPICAL)
JUNCTION TEMPERATURE (°C)
REVERSE RECOVERED CHARGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
RATE-OF-RISE OF OFF-STATE VOLTAGE (V/
μ
s)
TURN-OFF TIME VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
T
μ
s
10
0
7
10
1
2
3
5 7
2
3
5 7
10
3
3
5
7
10
4
2
3
5
7
2
3
t
trr
trr
Irm
2
Q
RR
=
Irm
I
TM
V
A
,
A
V
RM
d
i
/d
t
0
–
+
I
TM
= 3000A
V
RM
= 150V
T
j
= 125°C
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