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參數(shù)資料
| 型號(hào)： | HA16114PJ |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 12/38頁 |
| 文件大?。?/td> | 275K |
| 代理商： | HA16114PJ |
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HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
12
4. PWM Output Circuit and Power MOSFET Driving Method
These ICs have built-in totem-pole push-pull drive circuits that can drive a power MOS FET as shown in
figure 4.1. The power MOS FET can be driven directly through a gate protection resistor.
If V
IN
exceeds the gate breakdown voltage of the power MOS FET additional protective measures should
be taken, e.g. by adding Zener diodes as shown in figure 4.2.
To drive a bipolar power transistor, the base should be protected by voltage and current dividing resistors
as shown in figure 4.3.
P.GND
To C
L
R
G
OUT
V
IN
Bias
circuit
V
O
Gate protection
resistor
Totem-pole output circuit
Example:
P-channel power MOSFET
Figure 4.1 Connection of Output Stage to Power MOS FET
OUT
GND
V
IN
R
G
D
Z
V
O
Example: N-channel power MOSFET
Figure 4.2 Gate Protection by Zener Diodes
OUT
GND
V
IN
V
O
Base discharging resistor
Example: NPN power transistor
Base current
limiting resistor
Figure 4.3 Driving a Bipolar Power Transistor
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