參數(shù)資料
型號: HA16114PJ
廠商: Hitachi,Ltd.
元件分類: 基準電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關穩(wěn)壓器
文件頁數(shù): 12/38頁
文件大小: 275K
代理商: HA16114PJ
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
12
4. PWM Output Circuit and Power MOSFET Driving Method
These ICs have built-in totem-pole push-pull drive circuits that can drive a power MOS FET as shown in
figure 4.1. The power MOS FET can be driven directly through a gate protection resistor.
If V
IN
exceeds the gate breakdown voltage of the power MOS FET additional protective measures should
be taken, e.g. by adding Zener diodes as shown in figure 4.2.
To drive a bipolar power transistor, the base should be protected by voltage and current dividing resistors
as shown in figure 4.3.
P.GND
To C
L
R
G
OUT
V
IN
Bias
circuit
V
O
Gate protection
resistor
Totem-pole output circuit
Example:
P-channel power MOSFET
Figure 4.1 Connection of Output Stage to Power MOS FET
OUT
GND
V
IN
R
G
D
Z
V
O
Example: N-channel power MOSFET
Figure 4.2 Gate Protection by Zener Diodes
OUT
GND
V
IN
V
O
Base discharging resistor
Example: NPN power transistor
Base current
limiting resistor
Figure 4.3 Driving a Bipolar Power Transistor
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相關代理商/技術參數(shù)
參數(shù)描述
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