參數(shù)資料
型號(hào)： FY6ACJ-03A
廠商： Powerex Power Semiconductors
英文描述： JT 4C 4#16 SKT WALL RECP
中文描述： N溝道功率MOSFET高速開關(guān)使用
文件頁數(shù)： 2/4頁
文件大?。?/td> 39K
代理商： FY6ACJ-03A
Sep.1998
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
17
26
102
12
1000
350
160
15
25
75
55
0.75
—
35
—
±0.1
0.1
2.0
23
40
138
—
—
—
—
—
—
—
—
1.10
69.4
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 6A, V
GS
= 10V
I
D
= 3A, V
GS
= 4V
I
D
= 6A, V
GS
= 10V
I
D
= 6A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 15V, I
D
= 3A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 1.7A, V
GS
= 0V
Channel to ambient
I
S
= 1.7A, dis/dt = –50A/
μ
s
PERFORMANCE CURVES
0
0.4
0.8
1.2
1.6
2.0
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 10V
P
D
= 1.8W
T
C
= 25°C
Pulse Test
8V
6V
5V
3V
4V
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
V
GS
= 10V
8V
6V
5V
4V
P
D
= 1.8W
T
C
= 25°C
Pulse Test
3V
2
10
0
3 57
2
10
1
3 57
2
10
2
3 57
2
10
3
3 57
2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
2
tw = 100μs
100ms
1ms
10ms
DC
T
C
= 25°C
Single Pulse
相關(guān)PDF資料
PDF描述
FY6BCH-02 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FY7AAJ-03A GT 24C 24#16 SKT RECP
FY7AAJ-03A Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FY7ACH-03A Label Printer Ribbon; Leaded Process Compatible:No; Color:White; Peak Reflow Compatible (260 C):No; External Width:2"; Pack Quantity:1; Type:Cartridge
FY7ACH-03A Nch POWER MOSFET HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FY6BCH02 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | SO
FY6BCH-02 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FY6BCH02E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | SO
FY6BGH-02F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FY6BGH-02F Datasheet 42K/MAR.20.03
FY7/8TF 制造商:UNBRANDED 功能描述:BEARING FLANGED
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