參數(shù)資料
型號(hào): FY6ACJ-03A
廠商: Powerex Power Semiconductors
英文描述: JT 4C 4#16 SKT WALL RECP
中文描述: N溝道功率MOSFET高速開關(guān)使用
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 39K
代理商: FY6ACJ-03A
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
= 15V
20V
25V
T
C
h = 25°C
I
D
= 6A
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 6A
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
23 57
10
2
23 57
10
3
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
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