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參數(shù)資料
| 型號(hào)： | FY7BCH-02F |
| 英文描述： | FY7BCH-02F |
| 中文描述： | FY7BCH - 02F |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 97K |
| 代理商： | FY7BCH-02F |
PRELIMINARY
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
0
10
–1
8
16
24
32
40
10
1
2
10
0
3
5 7
2
10
2
3
5 7
2 3
5 7
V
GS
= 2.5V
Tc = 25
°
C
Pulse Test
4V
0
0.4
0.8
1.2
1.6
2.0
0
1.0
2.0
3.0
4.0
5.0
Tc = 25
°
C
Pulse Test
I
D
= 14A
3A
7A
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
2V
P
D
= 1.6W
1.5V
2
3
5
7
5
7
2
10
0
3
5 7
2
10
1
3
5 7
2
3
10
0
2
3
10
1
2
3
5
7
7
10
–1
tw = 10
μ
s
T
C
= 25
°
C
Single Pulse
100
μ
s
100ms
10ms
1ms
DC
0
0.4
0.8
1.2
1.6
2.0
0
200
50
100
150
V
GS
= 4V,3V,2.5V
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
3V
P
D
= 1.6W
2V
2.5V
1.5V
V
GS
= 4V
Tc = 25
°
C
Pulse Test
Tc = 25
°
C
Pulse Test
D
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
PERFORMANCE CURVES
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FY7BFH-02E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET |
| FY80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VEB WERK FUR FERNMELDEWESEN |
| FY8AAJ03A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| FY8AAJ-03A | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FY8AAJ-03F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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