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參數(shù)資料
| 型號： | FY7BCH-02F |
| 英文描述： | FY7BCH-02F |
| 中文描述： | FY7BCH - 02F |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 97K |
| 代理商： | FY7BCH-02F |
PRELIMINARY
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
V
DS
=10V
Pulse Test
0
10
20
30
40
50
0
1.0
2.0
3.0
4.0
5.0
Tc = 25
°
C
V
DS
= 10V
Pulse Test
10
–1
2
10
0
3
5 7
2
10
1
3
5 7
2
3
3
2
3
2
5
5
7
7
10
2
10
3
Ciss
Coss
Crss
Tch = 25
°
C
V
GS
= 0V
f = 1MH
Z
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
1
10
0
2
3
3
2
7
5
10
2
7
5
2
3
t
d(off)
t
d(on)
t
r
Tch = 25
°
C
V
GS
= 4V
V
DD
= 10V
R
GEN
= R
GS
= 50
t
f
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
125
°
C
75
°
C
25
°
C
V
GS
= 0V
T
C
= 25
°
C
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
0
8
16
24
32
40
7V
10V
15V
V
DS
=
I
D
=7A
Tch = 25
°
C
T
C
= 25
°
C,75
°
C,125
°
C
T
C
=
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
F
A
y
f
(
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
TRANSFER CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
C
C
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
S
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
GATE CHARGE Q
g
(nC)
G
G
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| FY7BFH-02E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET |
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| FY8AAJ-03A | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FY8AAJ-03F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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