參數(shù)資料
型號(hào)： FY8ABJ-03
廠商： Powerex Power Semiconductors
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:11; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述： P溝道功率MOSFET的高速開(kāi)關(guān)使用
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 38K
代理商： FY8ABJ-03
Sep.1998
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–2.0
14
26
0.112
19
3650
900
385
30
55
250
105
–0.77
—
100
—
±0.1
–0.1
–2.5
20
37
0.160
—
—
—
—
—
—
—
—
–1.20
62.5
—
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –8A, V
GS
= –10V
I
D
= –4A, V
GS
= –4V
I
D
= –8A, V
GS
= –10V
I
D
= –8A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
V
DD
= –15V, I
D
= –4A, V
GS
= –10V, R
GEN
= R
GS
= 50
I
S
= –2.1A, V
GS
= 0V
Channel to ambient
I
S
= –2.1A, dis/dt = 50A/
μ
s
PERFORMANCE CURVES
0
0.5
1.0
1.5
2.0
2.5
0
200
50
100
150
–10
–2
–10
–1
–10
0
–10
1
–7
–3
–2
–5
–3
–2
–3
–2
–3
–2
–7
–5
–5
–10
2
–2–3 –5–7
–10
–1
–2–3 –5–7
–10
0
–2–3 –5–7
–10
1
–2–3 –5–7
–10
2
–10
–2
tw =
1ms
10ms
100ms
DC
Tc = 25°C
Single Pulse
0
–10
–20
–30
–40
–50
0
–0.4
–0.8
–1.2
–1.6
–2.0
P
D
= 2W
Tc = 25°C
Pulse Test
–6V –5V
–4V
–3V
V
GS
= –10V
–8V
0
–4
–8
–12
–16
–20
0
–0.4
–0.8
–1.2
–1.6
–2.0
–2.5V
–3V
–4V
–5V
–6V
–8V
V
GS
=
–10V
Tc = 25°C
Pulse Test
P
D
= 2W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
相關(guān)PDF資料
PDF描述
FY8ACH-02A HIGH-SPEED SWITCHING USE
FYA3010DN Schottky Barrier Rectifier
FYAF3004DN SCHOTTKY BARRIER RECTIFIER
FYAF3045DN SCHOTTKY BARRIER RECTIFIER
FYD0504SA SCHOTTKY BARRIER RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FY8ACH-02A 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FY8BCH-02F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FY8BCH-02F Datasheet 42K/MAR.20.03
FY-912A 制造商:Excelitas Technologies Corporation 功能描述:Optoelectronics,Lamp
FYA3010DN 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Schottky Barrier Rectifier
FYA3010DNTU 功能描述:肖特基二極管與整流器 Schottky Barrier Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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