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參數(shù)資料
| 型號： | FZT491 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:18-11 |
| 中文描述： | 1 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 41K |
| 代理商： | FZT491 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
%
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT591
FZT491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=60V
Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
80
V
60
V
5
V
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current
I
EBO
I
CES
100
nA
V
EB
=4V
V
CES
=60V
Collector-Emitter Cut-Off
Current
100
nA
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=500mA, I
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
Static Forward Current
h
FE
100
100
80
30
300
I
C
=1mA, V
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
= 2A, V
CE
=5V*
I
=50mA, V
CE
=10V,
f =100MHz
Transition Frequency
f
T
150
MHz
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s.
For typical characteristics graphs see FMMT491 datasheet
C
obo
10
pF
V
CB
=10V, f=1MHz
FZT491
C
C
E
B
3 - 189
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT491_12 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN MEDIUM POWER TRANSISTOR IN SOT223 |
| FZT491A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述: |
| FZT491ATA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT491ATC | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT491TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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