參數(shù)資料
型號： FZT651
廠商： ZETEX PLC
元件分類： 功率晶體管
英文描述： NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS
中文描述： 3 A, 60 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 1/2頁
文件大?。?/td> 93K
代理商： FZT651
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
*
60 Volt V
CEO
*
3 Amp continuous current
*
Low saturation voltage
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
I
CBO
TYP.
MAX.
UNIT
V
CONDITIONS.
I
C
=100
μ
A
V
(BR)CBO
80
V
(BR)CEO
60
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
μ
A
0.1
10
0.1
0.3
0.6
1.25
μ
A
μ
A
μ
A
V
V
V
V
CB
=60V
V
CB
=60V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
I
C
=1A, I
B
=100mA*
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
0.12
0.43
0.9
V
BE(sat)
V
BE(on)
0.8
1
V
I
C
=1A, V
CE
=2V*
h
FE
70
100
80
40
200
200
170
80
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
=100mA, V
CE
=5V
f=100MHz
Transition Frequency
f
T
140
175
MHz
Switching Times
t
on
t
off
C
obo
45
ns
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
800
ns
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
30
pF
V
CB
=10V, f=1MHz
FZT651
C
C
E
B
3 - 207
相關(guān)PDF資料
PDF描述
FZT653 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
FZT655 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
FZT657 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FZT658 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FZT688B NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZT651 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223
FZT651_12 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223
FZT651QTA 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223
FZT651QTC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223
FZT651TA 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*