參數(shù)資料
型號： FZT653
廠商： ZETEX PLC
元件分類： 功率晶體管
英文描述： NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
中文描述： 2 A, 100 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 1/2頁
文件大?。?/td> 96K
代理商： FZT653
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
*
Low saturation voltage
COMPLEMENTARY TYPE
FZT753
PARTMARKING DETAIL
FZT653
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
I
CBO
TYP.
MAX.
UNIT
V
CONDITIONS.
I
C
=100
μ
A
V
(BR)CBO
120
V
(BR)CEO
100
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
μ
A
0.1
10
μ
A
μ
A
μ
A
V
V
V
V
CB
=100V
V
CB
=100V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
0.1
0.3
0.5
1.25
0.13
0.23
0.9
V
BE(sat)
V
BE(on)
0.8
1.0
V
I
C
=1A, V
CE
=2V*
h
FE
70
100
55
25
140
200
200
110
55
175
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
Transition Frequency
f
T
MHz
Output Capacitance
Switching Times
C
obo
t
on
t
off
30
pF
ns
ns
80
1200
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT653
C
C
E
B
3 - 209
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZT653 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223
FZT653TA 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT653TA-CUT TAPE 制造商:DIODES 功能描述:FZT653 Series NPN 2 A 100 V SMT Silicon High Performance Transistor - SOT-223
FZT653TC 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT655 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
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