參數(shù)資料
型號: FZT660A
文件頁數(shù): 12/12頁
文件大?。?/td> 169K
代理商: FZT660A
-
100
I
C
= 50 mA,V
CE
= 5 V, f=50MHz
Transition Frequency
f
T
SMALL SIGNAL CHARACTERISTICS
V
1
I
C
= 1 A, I
B
= 10 mA
Base-Emitter Saturation Voltage
V
BE(sat)
mV
250
450
750
I
C
= 500 mA, I
B
= 5 mA
I
C
= 1 A, I
B
= 10 mA
I
C
= 2 A, I
B
= 50 mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
800
300
250
200
150
I
C
= 10 mA, V
CE
= 2 V
I
C
= 500 mA, V
CE
= 2 V
I
C
= 1 A, V
CE
= 2 V
I
C
= 2 A, V
CE
= 2 V
DC Current Gain
h
FE
ON CHARACTERISTICS
*
nA
100
V
EB
= 4V
Emitter Cutoff Current
I
EBO
nA
uA
100
10
V
CB
= 30 V
V
CB
= 30 V, T
A
=100°C
Collector Cutoff Current
I
CBO
V
5
I
E
= 100
μ
A
Emitter-Base Breakdown Voltage
BV
EBO
V
50
I
C
= 100
μ
A
Collector-Base Breakdown Voltage
BV
CBO
V
40
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
BV
CEO
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
T
A = 25°C unless otherwise noted
*Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Page 2 of 2
fzt790a.lwpPrPA 7/10/98 revB
F
相關(guān)PDF資料
PDF描述
FZTA63 TRANSISTOR | BJT | DARLINGTON | PNP | 30V V(BR)CEO | 500MA I(C) | SOT-223
G0100RR Special Function Video Processor
G105 SIDAC|113V V(BO) MAX|200UA I(S)|DO-204AL
G120 SIDAC|125V V(BO) MAX|200UA I(S)|DO-204AL
G130 SIDAC|135V V(BO) MAX|200UA I(S)|DO-204AL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZT688B 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:DIODES 功能描述:TRANSISTOR, NPN, SOT-223, Transistor Polarity:NPN, Collector Emitter Voltage V(b 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223, Transistor Polarity:NPN, Collector Emitter Voltage V(b
FZT688B 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223
FZT688BTA 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT688BTC 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT689 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR