參數(shù)資料
型號(hào)： FZT660A
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 169K
代理商： FZT660A
July 1998
FZT560 / FZT560A
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
3
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
80
Collector-Base Voltage
V
CBO
V
60
Collector-Emitter Voltage
V
CEO
Units
FZT560/FZT560A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
62.5
Thermal Resistance, Junction to Ambient
R
θ
JA
W
2
Total Device Dissipation
P
D
FZT560/FZT560A
Units
Max
Characteristic
Symbol
Page 1 of 2
fzt560.lwpPrNA 7/10/98 revC
1998 Fairchild Semiconductor Corporation
C
E
C
B
SOT-223
F
Discrete Power & Signal
Technologies
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