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參數(shù)資料
| 型號： | G1117 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 鎵砷磷光電二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 172K |
| 代理商： | G1117 |
Features
l Low dark current
l High stability
Applications
l Analytical instrument
l Color identification
PHOTODIODE
GaAsP photodiode
Photodiode for visible light detection
Diffusion type
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
(mm)
(mm2)
(V)
(°C)
G1115
/K
TO-18
1.3 × 1.3
1.66
G1116
/K
TO-5
2.7 × 2.7
7.26
G1117
/K
TO-8
5.6 × 5.6
29.3
G1118
/R
Ceramic
1.3 × 1.3
1.66
G1120
/R
Ceramic
5.6 × 5.6
29.3
G3067
/L
TO-18
1.3 × 1.3
1.66
G2711-01
/R
Plastic
1.3 × 1.3
1.66
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Short circuit
current
Isc
100 lx
Dark
current
ID
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm)
λp
GaP
LED
560 nm
He-Ne
laser
633 nm
Min.
(A)
Typ.
(A)
V4=10 mV
(pA)
V4=1 V
(pA) (times/°C) (s)
(pF)
Min.
(G)
Typ.
(G)(W/Hz1/2)
G1115
0.12 0.15
1
10
1
300
10
80 1.5 × 10-15
G1116
0.45 0.6 2.5
25
4
1400
4
30 2.5 × 10-15
G1117
22.5
5
50
15
6000
2
15 3.5 × 10-15
G1118
0.12 0.15
1
10
1
300
10
80 1.5 × 10-15
G1120
22.5
5
50
15
6000
2
15 3.5 × 10-15
G3067
0.75 0.95
1
10
1
300
10
80 1.5 × 10-15
G2711-01
300 to 680 640
0.3
0.29 0.29
0.15 0.18
1
10
1.07
1
300
10
80 1.5 × 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
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