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參數(shù)資料
| 型號(hào)： | G6262 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 鎵砷磷光電二極管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | G6262 |
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
800
(Typ. Ta=25 C)
G5645
G7189
G6262
0
0.02
0.04
0.06
0.08
0.1
200
300
400
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
500
(Typ. Ta=25 C)
G5842
WAVELENGTH (nm)
(Typ.)
TEMPERATURE
COEFFICIENT
(%/
C)
400
200
-0.5
0
+0.5
+3.0
+2.5
+2.0
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, VR=0 V)
RISE
TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, VR=0 V)
DARK
CURRENT
0.01
0.1
0.001
100
fA
1
pA
100
pA
10
pA
110
AMBIENT TEMPERATURE (C)
(Typ. VR=10 mV)
SHUNT
RESISTANCE
020
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
s
Spectral response
KGPDB0029EA
KGPDB0001EC
s
Photo sensitivity temperature characteristic
KGPDB0030EA
s
Rise time vs. load resistance
KGPDB0031EA
s
Dark current vs. reverse voltage
KGPDB0032EA
s
Shunt resistance vs. ambient temperature
KGPDB0033EA
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