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參數(shù)資料
| 型號(hào)： | G67150 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode array |
| 中文描述： | 銦鎵砷PIN光電二極管陣列 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 112K |
| 代理商： | G67150 |
Features
l 16-element array
l For simple measurement
Applications
l Near Infrared (NIR) spectrophotometer
PHOTODIODE
InGaAs PIN photodiode array
16-element array
G7150/G7151-16
s General ratings
Parameter
G7150-16
G7151-16
Unit
Package
DIP
-
Active area
0.45 × 1 (× 16 elements)
0.08 × 0.2 (× 16 elements)
mm
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5V
Operating temperature
Topr
-25 to +70 *
°C
Storage temperature
Tstg
-25 to +70 *
°C
* No condensation
s Electrical and optical characteristics (Ta=25
°C, per 1 element)
G7150-16
G7151-16
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
0.9 to 1.7
-
0.9 to 1.7
-
m
Peak sensitivity w av elength
λp
-
1.55
-
1.55
-
m
λ=1.3 m
0.8
0.9
-
0.8
0.9
-
Photo sensitivity
S
λ=1.55 m
0.85
0.95
-
0.85
0.95
-
A/W
Dark current
ID
VR=1 V
-
5
25
-
0.2
1
nA
Cut-off frequency
fc
VR=1 V, RL=50
λ=1.3 m, -3 dB
-
30
-
300
-
MHz
Terminal capacitance
Ct
VR=1 V, f=1 MHz
-
100
-
10
-
pF
Shunt resistance
Rsh
VR=10 mV
-
100
-
1000
-
M
Detectivity
D
λ=λp
-
5 × 10
12
-
5 × 10
12
-
cmHz
1/2/W
Noise equivalent power
NEP
λ=λp
-2 × 10
-14
-
3 × 10
-15
-W/Hz
1/2
1
G7150/G7151-16 may be damaged by Electro Static Discharge, etc. Be carefull when using G7150/G7151-16.
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