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參數(shù)資料
| 型號： | G67150 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode array |
| 中文描述： | 銦鎵砷PIN光電二極管陣列 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 112K |
| 代理商： | G67150 |
InGaAs PIN photodiode array
G7150/G7151-16
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2007 Hamamatsu Photonics K.K.
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
2.0
0.5
0
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
(Typ. Ta=25
C)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
10 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT
RESISTANCE
1 G
10 M
1 M
100 M
100 G
(Typ. VR=10 mV)
20
G7150-16
G7151-16
0.25
0.5 ± 0.1
0.6 ± 0.3
ACTIVE AREA
(16 ×) 0.08 × 0.2
22.9 ± 0.3
7.5
±
0.2
2.2
±
0.3
4.0
MIN.
1.1
±
0.2
2.54 ± 0.15
0.46
0.8 ± 0.3
PIN No.
* CATHODE COMMON
DETECTOR
1
3
5
7
9
PIN No.
DETECTOR
*
11
13
15
16
PIN No.
DETECTOR
14
12
*
10
8
PIN No.
DETECTOR
6
4
2
WINDOW
PHOTOSENSITIVE
SURFACE
INDEX MARK
1
10
100
1000
10000
0.01
0.1
1
10
(Typ. Ta=25 C)
G7150-16
G7151-16
DARK
CURRENT
(pA)
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(pF)
REVERSE VOLTAGE
1
10
1000
100
0.01
0.1
1
10
(Typ. Ta=25 C, f=1 MHz)
G7150-16
G7151-16
Cat. No. KIRD1043E06
Feb. 2007 DN
s Spectral response
KIRDB0002EB
s Photo sensitivity temperature
characteristic
KIRDB0042EA
s Dark current vs. reverse voltage
s Terminal capacitance vs.
reverse voltage
s Shunt resistance vs. ambient
temperature
KMIRB0013EA
s Dimensional outlines (unit: mm)
KIRDA0144EC
KIRDA0030EE
KIRDB0254EA
KIRDB0255EB
G7150-16
G7151-16
PIN No.
DETECTOR
1
3
5
7
9
PIN No.
DETECTOR
*
11
13
15
16
PIN No.
DETECTOR
14
12
*
10
8
PIN No.
DETECTOR
6
4
2
0.25
0.5 ± 0.1
0.6 ± 0.3
WINDOW
ACTIVE AREA
(16 ×) 0.45 × 1
22.9 ± 0.3
7.5
±
0.2
2.2
±
0.3
4.0
MIN.
1.1
±
0.2
2.54 ± 0.15
0.46
1.0 ± 0.2
PHOTOSENSITIVE
SURFACE
INDEX MARK
* CATHODE COMMON
2
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|---|---|
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| G6742-01 | Tantalum Molded Capacitor; Capacitance: 47uF; Voltage: 10V; Case Size: 3.5x2.8 mm; Packaging: Tape & Reel |
| G6742-003 | InGaAs PIN photodiode |
| G6849-01 | InGaAs PIN photodiode |
| G6849 | Tantalum Molded Capacitor; Capacitance: 1.5uF; Voltage: 16V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel |
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