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參數(shù)資料
| 型號： | GA150TD12U |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 181K |
| 代理商： | GA150TD12U |
GA150TD120U
www.irf.com
5
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance
( )
1
10
100
0
10000
20000
30000
40000
50000
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
C SHORTED
GE
ies
res
oes
ge
gc
gc
Cies
Coes
Cres
0
200
400
600
800
1000
1200
0
5
10
15
20
QG
V
G
V
I
= 400V
= 171A
CC
C
0
10
R , Gate Resistance (Ohm)
20
30
40
50
50
60
70
80
90
100
T
V = 720V
V = 15V
T = 125
I = 150A
-60
-40 -20
0
20
40
60
80
100 120 140 160
10
100
1000
T , Junction Temperature ( C )
T
R = 15Ohm
V = 15V
V = 960V
I = A
300
I = A
150
I = A
75
=15
;R
= 0
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