參數(shù)資料
型號: GA200
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 晶閘管
英文描述: SCRs Nanosecond Switching, Planar
中文描述: 0.314 A, 60 V, SCR, TO-18
文件頁數(shù): 1/6頁
文件大小: 99K
代理商: GA200
1
GA200HS60S
Bulletin I27121 rev. B 07/02
V
CES
= 600V
V
CE(on) typ.
= 1.19V @
V
GE
= 15V, I
C
= 200A
T
J
= 25°C
"HALF-BRIDGE" IGBT INT-A-PAK
Standard Speed IGBT
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Voltage
600
V
I
C
Continuos Collector Current
@ T
C
= 25°C
@ T
C
= 110°C
470
A
200
I
CM
I
LM
V
GE
V
ISOL
Pulsed Collector Current
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
800
800
± 20
2500
V
P
D
Maximum Power Dissipation
@ T
C
= 25°C
@ T
C
= 85°C
830
W
430
Parameters
Max
Units
Generation 4 IGBT Technology
Standard speed: optimized for hard switching
operating frequencies up to 1000 Hz
Very Low Conduction Losses
Industry standard package
Features
Increased operating efficiency
Direct mounting to heatsink
Performance optimized as output nverter stage
for TIG welding machines
Benefits
INT-A-PAK
www.irf.com
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