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參數(shù)資料
| 型號： | GF2303A |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 2.5AI（四）| SOT - 23封裝 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 135K |
| 代理商： | GF2303A |
GF2301
P-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=
–
250
μ
A
–
20
—
—
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250
μ
A
V
DS
= 0V, V
GS
=
±
8V
–
0.45
—
—
V
Gate-Body Leakage
I
GSS
—
—
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
16V, V
GS
= 0V
—
—
–
1.0
μ
A
V
DS
=
–
16V, V
GS
= 0V, T
J
= 55
°
C
—
—
–
10
On-State Drain Current
(1)
I
D(on)
V
DS
≤
–
5V, V
GS
=
–
4.5V
V
DS
≤
–
5V, V
GS
=
–
2.5V
–
6
—
—
A
–
3
—
—
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
=
–
4.5V, I
D
=
–
2.8A
—
95
130
m
V
GS
=
–
2.5V, I
D
=
–
2.0A
—
122
190
Forward Transconductance
(1)
g
fs
V
DS
=
–
5V, I
D
=
–
2.8A
—
6.5
—
S
Dynamic
Total Gate Charge
Q
g
—
5.4
10
Gate-Source Charge
Q
gs
V
DS
=
–
6V, V
GS
=
–
4.5V
—
0.8
—
nC
Gate-Drain Charge
Q
gd
I
D
=
–
2.8A
—
1.1
—
Turn-On Delay Time
t
d(on)
—
5
25
Rise Time
t
r
V
DD
=
–
6V, R
L
= 6
I
D
≈
–
1A, V
GEN
=
–
4.5V
R
G
= 6
—
19
60
Turn-Off Delay Time
t
d(off)
—
95
110
ns
Fall Time
t
f
—
65
80
Input Capacitance
C
iss
V
DS
=
–
6V, V
GS
= 0V
—
447
—
Output Capacitance
C
oss
f = 1.0MH
Z
—
124
—
pF
Reverse Transfer Capacitance
C
rss
—
80
—
Source-Drain Diode
Maximum Diode Forward Current
I
S
—
—
—
–
1.6
A
Diode Forward Voltage
V
SD
I
S
=
–
1.6A, V
GS
= 0V
—
–
0.8
–
1.2
V
Note:
(1) Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%
Switching
Test Circuit
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Waveforms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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